Abstract In this paper, we review our recent experimental developments on antiferromagnet (AFM) spintronics mainly comprising Mn-based noncollinear AFM metals. IrMn-based tunnel junctions and Hall devices have been investigated to explore the manipulation of AFM moments by magnetic fields, ferromagnetic materials and electric fields.

Nu har företaget Spintronix (tidigare NM Spintronics), som arbetar med att kommersialisera Börje Johanssons och K Venkat Raos forskning, utvecklat materialet

We used Spintronics has received a great attention and considerable interest within the past decades. As a core device in this discipline, magnetic tunnel junction (MTJ) evolved rapidly and already be used in applications such as hard disk drive (HDD) read head and magnetic random access memory (MRAM) etc. Ultrafast spintronics roadmap: from femtosecond spin current pulses to terahertz non-uniform spin dynamics via nano-confined spin transfer torques (Conference Presentation) (Invited Paper) Paper 9931-44 Author(s): Researchers from the University of Tokyo have developed a spintronics device that can quickly and efficiently magnetize - which they say is between one and two orders of magnitude more power efficient than current spintronics device.The researchers used a ferromagnetic semiconductor material called. In the NanoElectronics group, we study several promising candidate systems for spintronics based on carbon-based materials and ferromagnetic metals for spintronics, which are outlined below. For a general introduction to the field, see “Organic Spintronics”, W.J.M. Naber, S. Faez and W.G. van der Wiel, J. Phys. D: Appl.

This is possible because of magnetic insulators (MIs), which have paved the way toward pure spin current-based spintronics. MIs with perpendicular anisotropy expand the horizon further, enabling new functionalities such as low-power spin-orbit torque switching, high-speed domain The FM||NM module incorporates a 3-dimensional current source that is defined by the short-circuit spin-pumping current that pumps spins. Note that the pumped spin-current to the outside (NM) is fed back into the LLG as a negative spin-torque source. Spintronics with multiferroics To cite this article: H Béa et al 2008 J. Phys.: Condens. (70 nm)/SRO STO(001)ﬁlm measured at 1 kHz and at room temperature.

In this work, we have investigated the spin pumping effect of Y3Fe5O12 (YIG)/Cu (t_Cu nm)/Cr heterostructures with the thickness of the Cu interlayer varying

l sf. in NM. Spin injection/extraction at a NM/FM interface (beyond ballistic range) NM. FM. zone of spin accumulation. NM l sf FM l sf E. F E. F Spin accumulation = E. F -E. F Spin current = J -J z.

Spin-electronics, abbreviated spintronics, is the name for a type of electronics nm) to make electronic devices and study many different spintronic effects like

BiFeO 3: an antiferromagnetic ferroelectric at room temperature. NM length in FM = spin diffusion length.

Our findings provide a new approach for generating spin accumulation and pure spin current intensity for spintronic applications. In recent years, spin-orbit coupling based phenomena at interfaces comprising ferromagnetic (FM) metal, oxide (O) and nonmagnetic metal (NM) have been an object of great interest for spintronics including spin-orbitronics [1]. At the same time, a major attention of scientific community has been These promising properties mean that this material could be a promising candidate for extremely thin (200 nm) vdW-heterostructure spintronics devices. Read the full story Posted: May 15, 2018 Researchers from MIPT design a new spin diode The recent emergence of two-dimensional (2D) materials with intrinsic long-range magnetic order opens the avenue of fundamental physics studies and the spintronics application; however, the mechanism of interlayer magnetic coupling and the feasible way to control magnetic states are yet to be fully investigated. In the present study, from first-principle calculations, we studied the interlayer NM SPINTRONICS LIMITED. Learn more about NM SPINTRONICS LIMITED. Check the company's details for free and view the Companies House information, company documents and list of directors.
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Magnetic fields.

Editorial, Nat. Nanotechnol. Spintronics is a promising technology which aims to solve the major problems existing in today’s conventional electronic devices. Realistically, this technology has the ability to combine the High power issues have become the main drawbacks of CMOS logic circuits as technology node shrinks below 45 nm.
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In recent years, spin-orbit coupling based phenomena at interfaces comprising ferromagnetic (FM) metal, oxide (O) and nonmagnetic metal (NM) have been an object of great interest for spintronics including spin-orbitronics [1]. At the same time, a major attention of scientific community has been

2020-11-11 · The ability to represent information using an antiferromagnetic material is attractive for future antiferromagnetic spintronic devices.

2021-01-04 · Considering the FM/NM heterostructure based on ISHE, the amplitude of the THz emission sensitively depends on the spin Hall angle γ NM of the NM layer, absorptance P abs of the laser power, and thicknesses d x (x = NM and FM) of the NM and FM layers, which has been expressed as 51,69 51.

Spintronics is a promising technology which aims to solve the major problems existing in today’s conventional electronic devices. Realistically, this technology has the ability to combine the main functions of the modern semiconductor microelectronics and magnetic storage devices in single chip. Spintronics studies the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solid state devices. • Spintronic systems can be realized in thin metallic or oxide films or in dilute magnetic semiconductors. Using spin and not charge Spintronics use magnetic materials patterned at the nano-scale to produce spin polatized currents which drive a new class of beyond CMOS components which include magnetic field sensors, non-volatile memories and RF devices. Spintronics research team (picture from April 2018) Spintronics (a portmanteau meaning spin transport electronics), also known as spin electronics, is the study of the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solid-state devices. Abstract In this paper, we review our recent experimental developments on antiferromagnet (AFM) spintronics mainly comprising Mn-based noncollinear AFM metals.

Predicted by Slonczewski and Berger in 1996 ( J. Magnetism and Magnetic Materials 159 (1996) L 1 -L7.